Installation type | Surface mount |
packing | pipe |
series | HEXFET® |
Part status | stop production |
working temperature | - |
Encapsulation/Housing | SOT-23-6 ,TSOT-23-6 |
Warehouse | China/Hong Kong |
quality | Original genuine |
Power - maximum | 960mW |
FET Type | N and P Channel |
Drain source voltage (Vdss) | 20V |
Current at 25 ° C - continuous drain (Id) | 2.7A,2.2A |
On resistance (maximum) for different Ids and Vgs | 90 mΩ @ 2.7A,4.5V |
Vgs (th) (maximum) for different Ids | 1.25V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 6nC @ 4.5V |
Input capacitance at different Vds (Ciss) (maximum) | 400pF @ 15V |
FET function | Logic level gate |